Improving the electrical properties of NILC poly-Si films using a gettering substrate

被引：24

作者：

Hu, Chen-Ming ^{[1
]}

Wu, YewChung Sermon ^{[1
]}

Lin, Chi-Ching ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 11期

关键词：

gettering; Ni-metal-induced lateral crystallization (NILC); thin-film transistors (TFTs);

D O I：

10.1109/LED.2007.907267

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, current crystallization technology often leads to Ni and NiSi2 precipitates being trapped, thus degrading the performance of the device. We proposed using a-Si-coated wafers as Ni-gettering substrates. After bonding the gettering substrate with the NILC poly-Si film both the Ni-metal impurity within the NILC poly-Si film and the leakage current were greatly reduced, thus increasing the ON/OFF current ratio.

引用

页码：1000 / 1003

页数：4

共 20 条

[1] Behavior of the drain leakage current in metal-induced laterally crystallized thin film transistors [J].

Bhat, GA ;

Kwok, HS ;

Wong, M .

SOLID-STATE ELECTRONICS, 2000, 44 (07) :1321-1324

[2] Effects of longitudinal grain boundaries on the performance of MILC-TFT's [J].

Bhat, GA ;

Jin, ZH ;

Kwok, HS ;

Wong, M .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (02) :97-99

[3] Wafer bonding by Ni-induced crystallization of amorphous silicon [J].

Chao, CP ;

Wu, YCS ;

Lee, TL ;

Wang, YH .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (9A) :5527-5530

[4]

Chen W.-K., 1993, LINEAR NETWORKS SYST, P123

[5] Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni [J].

Hoelzl, R ;

Range, KJ ;

Fabry, L ;

Hage, J ;

Raineri, V .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3) :95-98

[6] Performance of thin-film transistors with ultrathin Ni-MILC polycrystalline silicon channel layers [J].

Jin, ZH ;

Kwok, HS ;

Wong, M .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (04) :167-169

[7] Fabrication of high-mobility p-channel poly-Si thin film transistors by self-aligned metal-induced lateral crystallization [J].

Lee, SW ;

Ihn, TH ;

Joo, SK .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (08) :407-409

[8] High-performance nonhydrogenated nickel-induced laterally crystallized p-channel poly-Si TFTs [J].

Lee, Y ;

Bae, S ;

Fonash, SJ .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (12) :900-902

[9] Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers [J].

Liu, PC ;

Hou, CY ;

Wu, YCS .

THIN SOLID FILMS, 2005, 478 (1-2) :280-285

[10] External gettering by aluminum-silicon alloying observed from carrier recombination at dislocations in float zone silicon wafers [J].

Martinuzzi, S ;

Perichaud, I ;

Simon, JJ .

APPLIED PHYSICS LETTERS, 1997, 70 (20) :2744-2746

← 1 2 →