Electrostatic discharge testing of tunneling magnetoresistive (TMR) devices

被引：9

作者：

Wallash, A ^{[1
]}

Hillman, J

Sharma, M

Wang, SX

机构：

[1] Quantum Corp, Milpitas, CA 95035 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2000年 / 36卷 / 05期

关键词：

electrostatic discharge; ESD; dielectric breakdown; magnetic tunnel junctions; tunneling magnetoresistive (TMR);

D O I：

10.1109/20.908596

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on an experimental and SPICE simulation study of electrostatic discharge (ESD) damage of tunneling magnetoresistive (TMR) junctions. The human body model (HBM) ESD failure voltage was found to be 6 V-HBM, higher than the 2 V DC breakdown voltage. This difference is explained in terms of the dependence of the HBM failure voltage on the resistance and capacitance of the TMR device. A simple spice model for a TMR device is used to study the response of a TMR device during an ESD event.

引用

页码：2809 / 2811

页数：3

共 4 条

[1] Spin-dependent tunneling junctions with hard magnetic layer pinning [J].