Dominant defect levels in diamond thin films: A photocurrent and electron paramagnetic resonance study

被引:63
作者
Nesladek, M
Stals, LM
Stesmans, A
Iakoubovskij, K
Adriaenssens, GJ
机构
[1] Limburgs Univ Ctr, Div Mat Phys, Mat Res Inst, B-3590 Diepenbeek, Belgium
[2] Katholieke Univ Leuven, Lab Halfgeleiderfys, B-3001 Heverlee, Belgium
[3] Acad Sci Czech Republ, Inst Phys, CZ-16253 Prague 6, Czech Republic
关键词
D O I
10.1063/1.121632
中图分类号
O59 [应用物理学];
学科分类号
摘要
Characteristic features in photocurrent (PC) and electron paramagnetic resonance (EPR) spectra are discussed and attributed to main defects in the gap of optical-quality chemical vapor deposited diamond. A shoulder in the PC spectra with an onset at about 2.2 eV is attributed to the single-substitutional nitrogen defect (EPR P1 resonance at g = 2.0024). A second feature in the PC spectra with an onset of about 1.3 eV is observed on "as-grown" samples with a hydrogen terminated surface. The defect level associated with this feature is hydrogen related, and this defect disappears after oxidation of the diamond sample surface. The EPR g = 2.0028, which was also suggested to be H-related, is discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)01525-3].
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收藏
页码:3306 / 3308
页数:3
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