An insight into the mechanism of surface conductivity in thin film diamond

被引：71

作者：

Looi, HJ

Pang, LYS

Molloy, AB

Jones, F

Foord, JS

Jackman, RB

机构：

[1] UCL, London WC1E 7JE, England

[2] Univ Oxford, Phys & Theoret Chem Lab, Oxford OX1 3QZ, England

来源：

DIAMOND AND RELATED MATERIALS | 1998年 / 7卷 / 2-5期

关键词：

surface conductivity; hydrogen; thin film diamond; carrier mobility;

D O I：

10.1016/S0925-9635(97)00252-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond containing hydrogen at or near the surface displays p-type conductivity. The origin of this effect has been controversial. We have used I-V, Hall effect, SIMS, Raman, UPS and XPS to study hydrogenated polycrystalline CVD diamond films. The direct formation of acceptor states by hydrogen, which resides within the top 20 nm of the film, is the origin of the carriers present rather than surface band bending. Up to 10(19) holes cm(-3) can be measured and mobilities as high as 70 cm(2) Vs(-1) recorded. H-termination of the surface is important for the formation of high quality metal-diamond interfaces. (C) 1998 Elsevier Science S.A.

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页码：550 / 555

页数：6

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