Spin polarization and magneto-Coulomb oscillations in ferromagnetic single electron devices

被引:55
作者
Ono, K [1 ]
Shimada, H [1 ]
Ootuka, Y [1 ]
机构
[1] Univ Tokyo, Cryogen Ctr, Bunkyo Ku, Tokyo 1130032, Japan
关键词
single electron charging effect; Coulomb oscillation; ferromagnetic tunnel junction; electron spin-polarization;
D O I
10.1143/JPSJ.67.2852
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
magneto-Coulomb oscillation due to the single electron repopulation induced by external magnetic field, observed in a ferromagnetic single electron transistor is examined in various ferromagnetic single electron devices. In case of double- and triple-junction devices made of Ni and Co electrodes, the single electron repopulation always occurs from Ni to Co electrodes with increasing magnetic field, irrespective of the configurations of the electrodes. The period of the magneto-Coulomb oscillation is proportional to the single electron charging energy. All these features are consistently explained by the mechanism that the Zeeman effect induces changes of the Fermi energy of the ferromagnetic metal having a non-zero spin polarizations. Experimentally determined spin polarizations are negative for both Ni and Co and the magnitude is larger for Ni than Co as expected from the calculated hand structures.
引用
收藏
页码:2852 / 2856
页数:5
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