Electron beam lithography in nanoscale fabrication: recent development

被引:365
作者
Tseng, AA [1 ]
Chen, K
Chen, CD
Ma, KJ
机构
[1] Arizona State Univ, Dept Mech & Aerosp Engn, Tempe, AZ 85287 USA
[2] Univ Utah, Salt Lake City, UT USA
[3] Acad Sinica, Inst Phys, Taipei 115, Taiwan
[4] Chung Hua Univ, Dept Mech Engn, Hsinchu, Taiwan
来源
IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING | 2003年 / 26卷 / 02期
基金
美国国家科学基金会;
关键词
direct writing; e-beam resist; electron beam; lithography; nanodevices; nanofabrication; nanotechnology; projection printing;
D O I
10.1109/TEPM.2003.817714
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Miniaturization is the central theme in modern fabrication technology. Many of the components used in modern products are getting smaller and smaller. In this paper, the recent development of the electron beam lithography technique is reviewed with an emphasis on fabricating devices at the nanometer scale. Because of its very short wavelength and reasonable energy density characteristics, e-beam lithography has the ability to fabricate patterns having nanometer feature sizes. As a result, many nanoscale devices have been successfully fabricated by this technique. Following an introduction of this technique, recent developments in processing, tooling, resist, and pattern controlling are separately examined and discussed. Examples of nanodevices made by several different e-beam lithographic schemes are given, to illustrate the versatility and advancement of the e-beam lithography technique. Finally future trends in this technique are discussed.
引用
收藏
页码:141 / 149
页数:9
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