Ballistic switching and rectification in single wall carbon nanotube Y junctions

被引：76

作者：

Andriotis, AN

Menon, M

Srivastava, D

Chernozatonskii, L

机构：

[1] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Iraklion 71110, Crete, Greece

[2] Univ Kentucky, Dept Phys & Astron, Lexington, KY 40506 USA

[3] Univ Kentucky, Ctr Comp Sci, Lexington, KY 40506 USA

[4] NASA, Ames Res Ctr, CSC, Moffett Field, CA 94035 USA

[5] Russian Acad Sci, Inst Biochem Phys, Moscow 117977, Russia

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 02期

关键词：

D O I：

10.1063/1.1385194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transport properties of various semiconducting zig-zag carbon nanotube Y junctions are studied for the investigations of rectification and switching. Our results indicate that such junctions, when symmetric, can support both ballistic rectification and/or the ballistic switching operating modes. Although structural symmetry of the Y junction is found to be a necessary condition for rectification, it may not be sufficient in all cases. (C) 2001 American Institute of Physics.

引用

页码：266 / 268

页数：3

共 18 条

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