Ballistic switching and rectification in single wall carbon nanotube Y junctions

被引:76
作者
Andriotis, AN
Menon, M
Srivastava, D
Chernozatonskii, L
机构
[1] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Iraklion 71110, Crete, Greece
[2] Univ Kentucky, Dept Phys & Astron, Lexington, KY 40506 USA
[3] Univ Kentucky, Ctr Comp Sci, Lexington, KY 40506 USA
[4] NASA, Ames Res Ctr, CSC, Moffett Field, CA 94035 USA
[5] Russian Acad Sci, Inst Biochem Phys, Moscow 117977, Russia
关键词
D O I
10.1063/1.1385194
中图分类号
O59 [应用物理学];
学科分类号
摘要
Transport properties of various semiconducting zig-zag carbon nanotube Y junctions are studied for the investigations of rectification and switching. Our results indicate that such junctions, when symmetric, can support both ballistic rectification and/or the ballistic switching operating modes. Although structural symmetry of the Y junction is found to be a necessary condition for rectification, it may not be sufficient in all cases. (C) 2001 American Institute of Physics.
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页码:266 / 268
页数:3
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