Positron depth profiling

Wide-ranging studies of defects below the surface of semiconductor structures have been performed at the University of Bath, in collaboration with the University of Surrey Centre for Ion Beam Applications and with members of research teams at a number of UK, universities. Positron implantation has been used in conjunction with other spectroscopies such as RBS-channeling and SIMS, and electrical characterisation methods. Research has ranged from the development of a positron-based technique to monitor the in situ annealing of near-surface open-volume defects to the provision of information on defects to comprehensive diagnostic investigations of specific device structures. We have studied Si primarily but not exclusively; e.g., we have investigated ion-implanted SiC and SiO2/GaAs structures. Of particular interest are the applications of positron annihilation spectroscopy to ion-implanted semiconductors, where by linking ion dose to vacancy-type defect concentration one can obtain information on ion dose and uniformity with a sensitivity not achievable by standard techniques. A compact, user-friendly positron beam system is currently being developed at Bath, in collaboration with SCRIBA, with the intention of application in an industrial environment.