Post-implantation annealing of SiC studied by slow-positron spectroscopies

被引：37

作者：

Brauer, G

Anwand, W

Coleman, PG

Stormer, J

Plazaola, F

Campillo, JM

Pacaud, Y

Skorupa, W

机构：

[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

[2] Univ E Anglia, Sch Phys, Norwich NR4 7TJ, Norfolk, England

[3] Univ Bundeswehr Munchen, Inst Nukl Festkorperphys, D-85577 Neubiberg, Germany

[4] Euskal Herriko Uniberisitatea, Bilbao 48080, Spain

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1998年 / 10卷 / 05期

关键词：

D O I：

10.1088/0953-8984/10/5/022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of post-implantation annealing of damage in 6H-SiC caused by ion implantation at two different fluences have been studied by monoenergetic positron Doppler broadening and lifetime techniques. The:measurements are supported by new calculations of positron lifetimes in vacancy clusters in SiC. At both fluences two defected layers are identified and characterized by depth and defect type as a function of annealing temperature. The results indicate that it is impossible to remove the radiation damage by annealing at temperatures up to 1500 degrees C.

引用

页码：1147 / 1156

页数：10

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