RHEED characterization of InAs/GaAs grown by MBE

被引:5
作者
Cai, LC [1 ]
Chen, H [1 ]
Bao, CL [1 ]
Huan, Q [1 ]
Zhou, JM [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
关键词
heteroepitaxy; MBE; InAs; RHEED oscillation;
D O I
10.1016/S0022-0248(98)00913-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A simple method is suggested to obtain reflection high-energy electron diffraction (RHEED oscillation of InAs layer grown on a GaAs substrate. The growth process of InAs epilayer as well as the relation between the growth mode and V/III flux ratios are studied by RHEED oscillation. We find that RHEED intensity oscillation exists in the range of flux ratios of V/III from 5.3 to 7.3 under the In-rich conditions and from 10.5 to 22.7 under the As-rich conditions. A step flow growth mode occurs in the range of critical flux ratios of V/III from 7.3 to 10.5. A rough surface is observed at higher flux ratios of V/III under In-rich conditions. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:364 / 367
页数:4
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