CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OF GAAS/INAS(100) STRAIN LAYER MODULATED STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：18

作者：

YEN, MY ^{[1
]}

MADHUKAR, A ^{[1
]}

LEWIS, BF ^{[1
]}

FERNANDEZ, R ^{[1
]}

ENG, L ^{[1
]}

GRUNTHANER, FJ ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91109

来源：

SURFACE SCIENCE | 1986年 / 174卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90480-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：606 / 614

页数：9

共 16 条

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[5] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THIN GAAS/INAS(100) MULTIPLE QUANTUM WELL STRUCTURES [J].

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[6]

GRUNTHANER FJ, UNPUB SUPERLATTICES

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :560-563

[8] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING HOMOEPITAXIAL MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND IMPLICATIONS FOR GROWTH-KINETICS AND MECHANISMS [J].

LEWIS, BF ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1317-1322

[9] RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100) [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :419-424

[10] ROLE OF SURFACE KINETICS AND INTERRUPTED GROWTH DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF NORMAL AND INVERTED GAAS/ALGAAS(100) INTERFACES - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY DYNAMICS STUDY [J].

MADHUKAR, A ;

LEE, TC ;

YEN, MY ;

CHEN, P ;

KIM, JY ;

GHAISAS, SV ;

NEWMAN, PG .

APPLIED PHYSICS LETTERS, 1985, 46 (12) :1148-1150

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