Defect formation and structural alternation in modified SiO2 glasses by irradiation with F2 laser or ArF excimer laser

被引:42
作者
Ikuta, Y
Kikugawa, S
Hirano, M
Hosono, H
机构
[1] Japan Sci & Technol Corp, ERATO, Transparent Electro Act Mat Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
[2] Asahi Glass Co Ltd, Kanagawa Ku, Yokohama, Kanagawa 2210862, Japan
[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 06期
关键词
D O I
10.1116/1.1328055
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The formation and restoration of defects by F-2 laser irradiation with high laser fluence were investigated fur modified silica glasses, and the results were compared with those by ArF excimer laser irradiation. F-2 laser irradiation induced oxygen deficient centers (ODCs) and E' centers via one-photon-absorption processes, while ODC and E' defects are generated by two-photon-absorption processes by an ArF excimer laser. As-doped SiOHs and photoinduced SiOHs enhanced the formation of defects markedly in the case of F2 laser irradiation. F-2 laser light transformed isolated SiOH bonds into hydrogen-bonded SiOHs, while such a process did not occur under ArF excimer laser light. These results suggest that silica glass networks were dissociated by two types of processes. The dominant process is the formation of pairs of E' centers and NBOHCs, followed by conversion to the SiHs and SiOHs as a result of chemical reactions with hydrogen molecules in silica glass at room temperature, The other is the generation of ODC defects accompanied by interstitial oxygen molecules, which are also decomposed partly into E' centers with the aid of F-2 laser light. (C) 2000 American Vacuum Society. [S0734-211X(00)19206-6].
引用
收藏
页码:2891 / 2895
页数:5
相关论文
共 12 条
[1]   Lithography with 157 nm lasers [J].
Bloomstein, TM ;
Horn, MW ;
Rothschild, M ;
Kunz, RR ;
Palmacci, ST ;
Goodman, RB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2112-2116
[2]  
BRIMACOMBE RK, 1986, APPL PHYS, V66, P4035
[3]   Fluorine-doped SiO2 glasses for F2 excimer laser optics:: fluorine content and color-center formation [J].
Hosono, H ;
Mizuguchi, M ;
Skuja, L ;
Ogawa, T .
OPTICS LETTERS, 1999, 24 (22) :1549-1551
[4]   Effects of fluorine dimer excimer laser radiation on the optical transmission and defect formation of various types of synthetic SiO2 glasses [J].
Hosono, H ;
Mizuguchi, M ;
Kawazoe, H ;
Ogawa, T .
APPLIED PHYSICS LETTERS, 1999, 74 (19) :2755-2757
[5]   EXPERIMENTAL-EVIDENCE FOR THE SI-SI BOND MODEL OF THE 7.6-EV BAND IN SIO2 GLASS [J].
HOSONO, H ;
ABE, Y ;
IMAGAWA, H ;
IMAI, H ;
ARAI, K .
PHYSICAL REVIEW B, 1991, 44 (21) :12043-12045
[6]   Interaction of F2 excimer laser with SiO2 glasses:: Towards the third generation of synthetic SiO2 glasses [J].
Hosono, H ;
Ikuta, Y .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 166 :691-697
[7]   New silica glass for 157 nm lithography [J].
Ikuta, Y ;
Kikugawa, S ;
Kawahara, T ;
Mishiro, H ;
Shimodaira, N ;
Arishima, H ;
Yoshizawa, S .
19TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 1999, 3873 :386-391
[8]   DEPENDENCE OF DEFECTS INDUCED BY EXCIMER LASER ON INTRINSIC STRUCTURAL DEFECTS IN SYNTHETIC SILICA GLASSES [J].
IMAI, H ;
ARAI, K ;
HOSONO, H ;
ABE, Y ;
ARAI, T ;
IMAGAWA, H .
PHYSICAL REVIEW B, 1991, 44 (10) :4812-4818
[9]   F-doped and H2-impregnated synthetic SiO2 glasses for 157 nm optics [J].
Mizuguchi, M ;
Skuja, L ;
Hosono, H ;
Ogawa, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :3280-3284
[10]   Effect of Xe2* light (7.2 eV) on the infrared and vacuum ultraviolet absorption properties of hydroxyl groups in silica glass [J].
Morimoto, Y ;
Nozawa, S ;
Hosono, H .
PHYSICAL REVIEW B, 1999, 59 (06) :4066-4073