Influence of substrate temperature on the optical and piezoelectric properties of ZnO thin films deposited by rf magnetron sputtering

被引:76
作者
Kang, Seong Jun [1 ]
Joung, Yang Hee [1 ]
机构
[1] Chonnam Natl Univ, Dept Elect & Semicond Engn, Yosu 550749, South Korea
关键词
ZnO thin film; rf sputtering; piezoelectric constant; refractive index;
D O I
10.1016/j.apsusc.2007.03.020
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, ZnO thin films were fabricated using the rf magnetron sputtering method and their piezoelectrical and optical characteristics were investigated for various substrate temperatures. The ZnO thin film has the largest crystallization orientation for the (0 0 2) peak and the smallest FWHM value of 0.56 degrees at a substrate temperature of 200 degrees C. The surface morphology shows a relatively dense surface structure at 200 degrees C compared to the other substrate temperatures. The surface roughness shows the smallest of 1.6 nm at a substrate temperature of 200 degrees C. The piezoelectric constant of the ZnO thin film measured using the pneumatic loading method (PLM) has a maximum value of 11.9 pC/N at a substrate temperature of 200 degrees C. The transmittance of the ZnO thin film measured using spectrophotometry with various substrate temperatures ranged from 75 to 93% in the visible light region. By fitting the refractive index from the transmittance to the Sellmeir dispersion relation, we can predict the refractive index of the ZnO thin film according to the wavelength. In the visible light range, the refraction index of the ZnO thin film deposited at a substrate temperature of 200 degrees C is the range of 1.88-2.08. (c) 2007 Elsevier B. V. All rights reserved.
引用
收藏
页码:7330 / 7335
页数:6
相关论文
共 24 条
  • [1] Ahn CW, 2005, J KOREAN PHYS SOC, V46, P334
  • [2] High temperature excitonic stimulated emission from ZnO epitaxial layers
    Bagnall, DM
    Chen, YF
    Zhu, Z
    Yao, T
    Shen, MY
    Goto, T
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1038 - 1040
  • [3] THIN-FILM ZNO AS MICROMECHANICAL ACTUATOR AT LOW-FREQUENCIES
    BLOM, FR
    YNTEMA, DJ
    VANDEPOL, FCM
    ELWENSPOEK, M
    FLUITMAN, JHJ
    POPMA, TJA
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 1990, 21 (1-3) : 226 - 228
  • [4] ZnO as a novel photonic material for the UV region
    Chen, YF
    Bagnall, D
    Yao, TF
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3): : 190 - 198
  • [5] The preparation and characterization of ZnO ultrafine particles
    Jing, LQ
    Xu, ZL
    Shang, J
    Sun, XJ
    Cai, WM
    Guo, HC
    [J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2002, 332 (1-2): : 356 - 361
  • [6] Piezoelectric properties of lead zirconate titanate thin films characterized by the pneumatic loading method
    Kim, DG
    Kim, HG
    [J]. INTEGRATED FERROELECTRICS, 1999, 24 (1-4) : 107 - 119
  • [7] KIM DG, 1998, P 11 IEEE INT S APPL, P65
  • [8] Kim HW, 2004, J KOREAN PHYS SOC, V44, P14
  • [9] SIMULTANEOUS DETERMINATION OF DISPERSION-RELATION AND DEPTH PROFILE OF THORIUM FLUORIDE THIN-FILM BY SPECTROSCOPIC ELLIPSOMETRY
    KIM, SY
    VEDAM, K
    [J]. THIN SOLID FILMS, 1988, 166 (1-2) : 325 - 334
  • [10] Effect of preheating temperature on structural and optical properties of ZnO thin films by sol-gel process
    Kim, YS
    Tai, WP
    Shu, SJ
    [J]. THIN SOLID FILMS, 2005, 491 (1-2) : 153 - 160