Investigation of the non-radiative processes in porous silicon

被引：13

作者：

Amato, G ^{[1
]}

Boarino, L ^{[1
]}

Brunetto, N ^{[1
]}

Rossi, AM ^{[1
]}

Parisini, A ^{[1
]}

机构：

[1] CNR,LAMEL,I-40129 BOLOGNA,ITALY

来源：

THIN SOLID FILMS | 1996年 / 276卷 / 1-2期

关键词：

silicon; luminescence; computer simulation; nanostructures;

D O I：

10.1016/0040-6090(95)08069-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature (T) dependence of the yellow-red photoluminescence band is studied in the range from 300 K to 10 K. From the simultaneous intensity and lifetime measurements it is possible to separate unambiguously the radiative and non-radiative components of the decay process. From the analysis of the non-radiative component a model is suggested in which potential barriers can confine excitons, limiting in this way the possible paths for non-radiative recombination.

引用

收藏

页码：51 / 54

页数：4

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