Impurity gettering to secondary defects created by MeV ion implantation in silicon

被引:83
作者
Brown, RA
Kononchuk, O
Rozgonyi, GA
Koveshnikov, S
Knights, AP
Simpson, PJ
Gonzalez, F
机构
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[2] SEH Amer Inc, Vancouver, WA 98682 USA
[3] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada
[4] Micron Technol Inc, Boise, ID 83707 USA
关键词
D O I
10.1063/1.368438
中图分类号
O59 [应用物理学];
学科分类号
摘要
Impurities in MeV-implanted and annealed silicon may be trapped at interstitial defects near the projected ion range, R-p, and also at vacancy-related defects at approximately R-p/2. We have investigated the temperature dependence of impurity trapping at these secondary defects, which were pn formed by annealing at 900 degrees C, The binding energies of Fe, Ni, and Cu are greater at the vacancy-related defects than at extrinsic dislocation loops. During subsequent processing at temperatures up to 900 degrees C, the amount of these impurities trapped at R-p/2 increases with decreasing temperature while the amount trapped at R-p decreases, with most of the trapped metals located at R-p/2 in samples processed at temperatures less than or similar to 700 degrees C, However, intrinsic oxygen is trapped at both types of defects; this appears to have little effect on the trapping of metallic impurities at extrinsic dislocations, but may inhibit or completely suppress the trapping at vacancy-related defects. (C) 1998 American Institute of Physics. [S0021-8979(98)00517-9].
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页码:2459 / 2465
页数:7
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