MAGIC NUMBERS FOR VACANCY AGGREGATION IN CRYSTALLINE SI

被引:103
作者
CHADI, DJ
CHANG, KJ
机构
来源
PHYSICAL REVIEW B | 1988年 / 38卷 / 02期
关键词
D O I
10.1103/PhysRevB.38.1523
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1523 / 1525
页数:3
相关论文
共 20 条
[1]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[2]  
BARAFF GA, 1979, PHYS REV LETT, V37, P1504
[3]   SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562
[4]   PHOTOFRAGMENTATION OF MASS-RESOLVED SI-2-12(+) CLUSTERS [J].
BLOOMFIELD, LA ;
FREEMAN, RR ;
BROWN, WL .
PHYSICAL REVIEW LETTERS, 1985, 54 (20) :2246-2249
[5]   MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].
CAR, R ;
KELLY, PJ ;
OSHIYAMA, A ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817
[6]   THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1984, 29 (02) :785-792
[7]   PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].
CORBETT, JW ;
WATKINS, GD .
PHYSICAL REVIEW, 1965, 138 (2A) :A555-&
[8]  
CORBETT JW, 1981, DEFECTS SEMICONDUCTO, V2, P1
[9]   ABINITIO LINEAR COMBINATION OF PSEUDO-ATOMIC-ORBITAL SCHEME FOR THE ELECTRONIC-PROPERTIES OF SEMICONDUCTORS - RESULTS FOR 10 MATERIALS [J].
JANSEN, RW ;
SANKEY, OF .
PHYSICAL REVIEW B, 1987, 36 (12) :6520-6531
[10]   SPIN-1 CENTERS IN NEUTRON-IRRADIATED SILICON [J].
JUNG, W ;
NEWELL, GS .
PHYSICAL REVIEW, 1963, 132 (02) :648-&