Reliability improvement of Cu interconnects by additional anneal between CuCMP and barrier CMP

被引：6

作者：

Harada, T ^{[1
]}

Kobayashi, K ^{[1
]}

Takahashi, M ^{[1
]}

Nii, K ^{[1
]}

Ikeda, A ^{[1
]}

Ueda, T ^{[1
]}

Yabu, T ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, ULSI Proc Technol Dev Ctr, Minami Ku, Kyoto 6018413, Japan

来源：

PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2003年

关键词：

D O I：

10.1109/IITC.2003.1219722

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The new technology which improves the reliability of Cu interconnects has been developed. In this technology, an anneal is carried out after a Cu CMP, followed by a barrier CMP and a p-SiN deposition. As a result, electromigration (EM) lifetime and stress-induced voiding (SIV) resistance have been improved drastically without the degradation of device performance and yield. Structural analyses suggest that the reliability improvement is realized by the reduction of tensile stress due to the stabilization of the Cu films and the minimization of the contact area of p-SiN/Cu interface due to the surface smoothing.

引用

页码：92 / 94

页数：3

共 6 条

[1] 0.42 μm contacted pitch dual damascene copper interconnect for 0.15 μm EDRAM using tapered via aligned to trench
Hattori, T
Masuda, H
Sato, H
Matsuda, T
Yamamoto, A
Kato, Y
Ogawa, S
Ohsaki, A
Ueda, T
[J]. PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2000, : 155 - 157
[2] Bimodal electromigration mechanisms in dual-damascene Cu line/via on W
Hu, CK
Gignac, L
Liniger, E
Rosenberg, R
Stamper, A
[J]. PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2002, : 133 - 135
[3] MICROSTRUCTURE BASED STATISTICAL-MODEL OF ELECTROMIGRATION DAMAGE IN CONFINED LINE METALLIZATIONS IN THE PRESENCE OF THERMALLY-INDUCED STRESSES
KORHONEN, MA
BORGESEN, P
BROWN, DD
LI, CY
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) : 4995 - 5004
[4] Oshima T, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P757, DOI 10.1109/IEDM.2002.1175948
[5] Improvement of thermal stability of via resistance in dual damascene copper interconnection
Oshima, T
Tamaru, T
Ohmori, K
Aoki, H
Ashihara, H
Saito, T
Yamaguchi, H
Miyauchi, M
Torii, K
Murata, J
Satoh, A
Miyazaki, H
Hinode, K
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 123 - 126
[6] Rhee SH, 2001, IEEE INT INTERC TECH, P89, DOI 10.1109/IITC.2001.930026

← 1 →