Bimodal electromigration mechanisms in dual-damascene Cu line/via on W

被引：18

作者：

Hu, CK ^{[1
]}

Gignac, L ^{[1
]}

Liniger, E ^{[1
]}

Rosenberg, R ^{[1
]}

Stamper, A ^{[1
]}

机构：

[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014911

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electromigration in 0.23 mum wide Cu dual-damascene lines connected to W underlayers has been investigated. Void growth at the vicinity of the cathode end of the line/via was determined to be the cause of the line failure. The distribution of failure lifetimes was found to be closely represented by a two-log-normal function. Focused ion beam analysis showed that the two failure populations had distinct difference in the location of the void growth.

引用

页码：133 / 135

页数：3

共 5 条

[1]

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[2]

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