Anomalous gate length dependence of threshold voltage of trench-isolated metal oxide semiconductor field effect transistors

被引：3

作者：

Oishi, T ^{[1
]}

Shiozawa, K ^{[1
]}

Furukawa, A ^{[1
]}

Abe, Y ^{[1
]}

Tokuda, Y ^{[1
]}

机构：

[1] Mitsubishi Elect Corp, Adv Technol R&D Ctr, Itami, Hyogo 6648641, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 7B期

关键词：

ULSI; trench isolation; metal oxide semiconductor field effect transistor; short channel;

D O I：

10.1143/JJAP.37.L852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the influence of trench isolation edges on metal oxide semiconductor field effect transistors (MOSFETs) by comparison with the characteristics of a reference transistor with no isolation edge. The result indicates that the gate length (Lf dependence of the threshold voltage (V-th) is remarkably modified by an electric field concentration at the channel edge. The anomalous V-th, behavior is explained in terms of the mixing between the short and narrow channel effects, by a qualitative three-dimensional analysis.

引用

页码：L852 / L854

页数：3

共 7 条

[1] 3-DIMENSIONAL ANALYTICAL SUBTHRESHOLD MODELS FOR BULK MOSFET [J].

AGRAWAL, B ;

DE, VK ;

MEINDL, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (12) :2170-2180

[2] A shallow trench isolation study for 0.25/0.18 mu m CMOS technologies and beyond [J].

Chatterjee, A ;

Esquivel, J ;

Nag, S ;

Ali, I ;

Rogers, D ;

Tayor, K ;

Joyner, K ;

Mason, M ;

Mercer, D ;

Amerasekera, A ;

Houston, T ;

Chen, LC .

1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1996, :156-157

[3]

NISHIOKA Y, 1995, 1995 INT EL DEV M DE, P903

[4]

OISHI T, 1997, JPN J APPL PHYS, V36, pL597

[5]

PERERA AH, 1995, 1995 INT EL DEV M DE, P679

[6]

SALLAGOITY P, 1996, P 1996 26 EUR SOL ST, P249

[7] Electrical characteristics of ultra-fine trench isolation fabricated by a new two-step filling process [J].

Shiozawa, K ;

Oishi, T ;

Maeda, H ;

Murakami, T ;

Yasumura, K ;

Abe, Y ;

Tokuda, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (12B) :L1625-L1627

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