End domain states and magnetization reversal in submicron magnetic structures

被引：79

作者：

Shi, J

Zhu, T

Durlam, M

Chen, E

Tehrani, S

Zheng, YF

Zhu, JG

机构：

[1] Motorola Phoenix Corp Res Labs, Tempe, AZ 85284 USA

[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1998年 / 34卷 / 04期

关键词：

end domains; micromagnetics; submicron; magnetization reversal;

D O I：

10.1109/20.706336

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Patterned submicron magnetic thin films of various geometries have been systematically studied. We have observed end domain states in rectangular elements, which is in excellent agreement with micromagnetic simulation results. Significant deviation from single domain behavior has been found in low aspect ratio elements. We will show that this deviation is attributed to behavior of the end domains.

引用

页码：997 / 999

页数：3

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