Diffusion of 18 elements implanted into thermally grown SiO2

Diffusion data are presented for 18 elements implanted in SiO2 layers thermally grown on silicon and annealed at temperatures ranging from 300 to 1000degreesC. Most species studied, (e.g., Be, B, Al, Sc, Ti, V, Zn, Ga, and Mo), showed negligible diffusion over the examined temperature range. In general, this study has shown that the diffusivity of dopants or impurities in SiO2 is significantly smaller than that in silicon. However we also observed that several elements (e.g., Rb and In) have a higher diffusivity in SiO2 than in Si. Because Ga and In are both used as sources for focused ion beam analyses, the lack of Ga diffusion and the movement of In in SiO2 is of interest. (C) 2003 American Institute of Physics.