Measurement of adhesion strength in copper interconnection layers

被引：7

作者：

Hara, T ^{[1
]}

Uchida, M

Fujimoto, M

Doy, TK

Balakumar, S

Babu, N

机构：

[1] Hosei Univ, Dept Elect Engn, Tokyo 1840002, Japan

[2] Saitama Univ, Urawa, Saitama 3388570, Japan

[3] Inst Microelect, Singapore 117685, Singapore

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 02期

关键词：

D O I：

10.1149/1.1635092

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 [应用化学];

摘要：

The adhesion strength of copper layers on TaN barrier layers decreases from 19.5 to 10 gf with annealing at 400degreesC. A much lower stress layer can be obtained when a seed layer is deposited on a TaSiN barrier layer. The adhesion strength is as high as 35 gf and is not changed by annealing. The critical pressure for delamination at the barrier layer/low dielectric (epsilon) layer interface decreases from 350 to 200 g/cm(2) when epsilon is reduced from 3.3 to 2.7 in an SiOC interlayer. That is, better adhesion strength can be attained when an interlayer with a higher dielectric constant is used. (C) 2003 The Electrochemical Society.

引用

收藏

页码：G28 / G30

页数：3

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