The influences of AlxGa1-xN layer on the characteristics of UV LED structure

被引：3

作者：

Lee, CR ^{[1
]}

Son, SJ

Seol, KW

Yeon, JM

Ahn, HK

Park, YJ

机构：

[1] Chonbuk Natl Univ, Coll Engn, RIAMD, Sch Adv Mat Engn, Chonju 561756, Chonbuk, South Korea

[2] SALT, Nitride Semicon Lab, Sucuon 440600, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 226卷 / 2-3期

关键词：

characterization; metal-organic vapor phase epitaxy; nitrides; semiconducting gallium compounds; light emitting diodes;

D O I：

10.1016/S0022-0248(01)01386-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied growth characteristics of AlxGa1-xN/GaN epilayers which were grown with various x values and their effects on the characteristics of UV LED chips fabricated by AlxGa1-xN/GaN double heterojunction having different band offset. The van der Pauw technique, double crystal X-ray diffractometry (DCXRD), optical microscope and photoluminescence (PL) were used to characterize crystallographic, electrical and optical properties of each AlxGa1-xN epilayer. The device characteristcs of the fabricated UV LED chips were evaluated by measuring current-voltage (I-V) and light power-current (L-I) measurements were carried out. The PL spectra and the DCXRD results show that the dislocation density of AlxGa1-xN epilayer resulted from the difference of lattice mismatch between AlxGa1-xN and GaN and the FWHM increases by raising the Al incorporation. The turn-on voltage of the UV LED chips fabricated by AlxGa1-xN/GaN double heterojunction is less dependent on both the x value of AlxGa1-xN cladding layer and the related band offset (DeltaE(g)). It was found that the optical power is strongly dependent on the dislocation density of each AlxGa1-xN cladding layer related to the individual x value. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：215 / 222

页数：8

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