Large-scale "surface-programmed assembly" of pristine vanadium oxide nanowire-based devices

被引：116

作者：

Myung, S

Lee, M

Kim, GT

Ha, JS

Hong, S

机构：

[1] Seoul Natl Univ, Phys & Nanosyst Inst, Seoul 151742, South Korea

[2] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

[3] Korea Univ, Dept Chem & Biol Engn, Seoul 136701, South Korea

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 19期

关键词：

D O I：

10.1002/adma.200500682

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Surface-programmed assembly is presented as a technique (see Figure) to achieve high-precision assembly and alignment of a large number of pristine V2O5 nanowires on solid substrates. Positively charged surface molecular patterns guide the assembly and alignment of negatively charged V2O5 nanowires on solid substrates. Large-scale assembly Of V2O5 nanowire-based transistors is demonstrated and their gating effects are confirmed.

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页码：2361 / +

页数：5

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