Optical properties of As doped ZnO thin films prepared by pulsed laser deposition technique

被引：43

作者：

Shan, FK ^{[1
]}

Shin, BC ^{[1
]}

Kim, SC ^{[1
]}

Yu, YS ^{[1
]}

机构：

[1] Dongeui Univ, Elect Ceram Ctr, Pusan 614714, South Korea

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2004年 / 24卷 / 06期

关键词：

annealing; films; impurities; optical properties; ZnO;

D O I：

10.1016/S0955-2219(03)00489-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO thin films are deposited on glass substrates at adapted experimental conditions during the pulsed laser deposition (PLD). The as-deposited thin films are attached by GaAs wafers and annealed at different temperatures and for different times. Transmittance and photoluminescence (PL) are measured to evaluate the As doping. With increasing annealing temperature and annealing time the transmission of films in the VIS range decreases. The band gap energies are determined by a linear fit of the absorption edge. In PL spectra, two PL emission peaks are found in all samples, one is the near band edge emission, and the ether is green emission. The annealing decreases the intensity of the green emission. The aging is found in ZnO thin films by PL measurements. As time goes on, the green emission peak decreases, and the near band emission peak is enhanced because of the decrease of oxygen vacancies in thin films. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1861 / 1864

页数：4

共 10 条

[1]

Chrisey D. B., 1994, PULSED LASER DEPOSIT

[2] BULK ELECTRON TRAPS IN ZINC-OXIDE VARISTORS [J].

CORDARO, JF ;

SHIM, Y ;

MAY, JE .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4186-4190

[3] Varistor behaviour of Mn-doped ZnO ceramics [J].

Han, JP ;

Senos, AMR ;

Mantas, PQ .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2002, 22 (9-10) :1653-1660

[4] Recent advances in ZnO materials and devices [J].

Look, DC .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3) :383-387

[5] Synthesis of p-type ZnO films [J].

Ryu, YR ;

Zhu, S ;

Look, DC ;

Wrobel, JM ;

Jeong, HM ;

White, HW .

JOURNAL OF CRYSTAL GROWTH, 2000, 216 (1-4) :330-334

[6] Textured ZnO thin films for solar cells grown by a two-step process with the atomic layer deposition technique [J].

Sang, BS ;

Yamada, A ;

Konagai, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (2B) :L206-L208

[7]

SHAN FK, 2003, J EUR CERAM SOC

[8] On the optical band gap of zinc oxide [J].

Srikant, V ;

Clarke, DR .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) :5447-5451

[9] Scanning force microscopy and electron microscopy studies of pulsed laser deposited ZnO thin films: application to the bulk acoustic waves (BAW) devices [J].

Verardi, P ;

Nastase, N ;

Gherasim, C ;

Ghica, C ;

Dinescu, M ;

Dinu, R ;

Flueraru, C .

JOURNAL OF CRYSTAL GROWTH, 1999, 197 (03) :523-528

[10] Transparent conducting ZnO:Al films deposited on organic substrates deposited by r.f. magnetron-sputtering [J].

Yang, TL ;

Zhang, DH ;

Ma, J ;

Ma, HL ;

Chen, Y .

THIN SOLID FILMS, 1998, 326 (1-2) :60-62

← 1 →