Transport and percolation in a low-density high-mobility two-dimensional hole system

被引：74

作者：

Manfra, M. J. ^{[1
]}

Hwang, E. H.

Das Sarma, S.

Pfeiffer, L. N.

West, K. W.

Sergent, A. M.

机构：

[1] Alcatel Lucent, Bell Labs, Murray Hill, NJ 07974 USA

[2] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.99.236402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime (p greater than or similar to 4x10(9) cm(-2)), the nonmonotonic temperature dependence (similar to 50-300 mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of T=50 mK, the conductivity versus density data indicate an inhomogeneity driven percolation-type transition to an insulating state at a critical density of 3.8x10(9) cm(-2).

引用

页数：4

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