The so-called two dimensional metal-insulator transition

被引:54
作者
Das Sarma, S [1 ]
Hwang, EH [1 ]
机构
[1] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA
基金
美国国家科学基金会;
关键词
2D metal-insulator transitions; electronic transport in mesoscopic systems; theory of electronic transport;
D O I
10.1016/j.ssc.2005.04.035
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density 2D semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms underlying the anomalous behavior of the 2D effective metallic phase and the metal-insulator transition itself. We argue that a key feature of the 2D MIT physics is the long-range bare Coulombic disorder arising from the random distribution of charged impurities in the low-density 2D semiconductor structures. (C) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:579 / 590
页数:12
相关论文
共 78 条
[1]   Colloquium:: Metallic behavior and related phenomena in two dimensions [J].
Abrahams, E ;
Kravchenko, SV ;
Sarachik, MP .
REVIEWS OF MODERN PHYSICS, 2001, 73 (02) :251-266
[2]   SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].
ABRAHAMS, E ;
ANDERSON, PW ;
LICCIARDELLO, DC ;
RAMAKRISHNAN, TV .
PHYSICAL REVIEW LETTERS, 1979, 42 (10) :673-676
[3]   Symmetric elastic and spin-flip low-energy collisions of the hydrogen-isotope mesic atoms in the adiabatic hyperspherical approach [J].
Abramov, DI ;
Gusev, VV ;
Ponomarev, LI .
PHYSICS OF ATOMIC NUCLEI, 2004, 67 (02) :226-240
[4]   Metal-insulator transition in 2D: resistance in the critical region [J].
Altshuler, BL ;
Maslov, DL ;
Pudalov, VM .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 9 (02) :209-225
[5]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[6]   THE ANDERSON-MOTT TRANSITION [J].
BELITZ, D ;
KIRKPATRICK, TR .
REVIEWS OF MODERN PHYSICS, 1994, 66 (02) :261-390
[7]  
BISHOP DJ, 1980, PHYS REV LETT, V44, P1153, DOI 10.1103/PhysRevLett.44.1153
[8]   TEMPERATURE-DEPENDENT RESISTIVITIES IN SILICON INVERSION-LAYERS AT LOW-TEMPERATURES [J].
CHAM, KM ;
WHEELER, RG .
PHYSICAL REVIEW LETTERS, 1980, 44 (22) :1472-1475
[9]   Parallel magnetic field induced giant magnetoresistance in low density quasi-two-dimensional layers [J].
Das Sarma, S ;
Hwang, EH .
PHYSICAL REVIEW LETTERS, 2000, 84 (24) :5596-5599
[10]   Two-dimensional metal-insulator transition as a percolation transition in a high-mobility electron system [J].
Das Sarma, S ;
Lilly, MP ;
Hwang, EH ;
Pfeiffer, LN ;
West, KW ;
Reno, JL .
PHYSICAL REVIEW LETTERS, 2005, 94 (13)