2D metal-insulator transitions;
electronic transport in mesoscopic systems;
theory of electronic transport;
D O I:
10.1016/j.ssc.2005.04.035
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density 2D semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms underlying the anomalous behavior of the 2D effective metallic phase and the metal-insulator transition itself. We argue that a key feature of the 2D MIT physics is the long-range bare Coulombic disorder arising from the random distribution of charged impurities in the low-density 2D semiconductor structures. (C) 2005 Elsevier Ltd. All rights reserved.