Thermodynamic density of states of two-dimensional GaAs systems near the apparent metal-insulator transition

被引:54
作者
Allison, G. [1 ]
Galaktionov, E. A.
Savchenko, A. K.
Safonov, S. S.
Fogler, M. M.
Simmons, M. Y.
Ritchie, D. A.
机构
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
关键词
D O I
10.1103/PhysRevLett.96.216407
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We perform combined resistivity and compressibility studies of two-dimensional hole and electron systems which show the apparent metal-insulator transition-a crossover in the sign of partial derivative R/partial derivative T with changing density. No thermodynamic anomalies have been detected in the crossover region. Instead, despite a tenfold difference in r(s), the compressibility of both electrons and holes is well described by the theory of nonlinear screening of the random potential. We show that the resistivity exhibits a scaling behavior near the percolation threshold found from analysis of the compressibility. Notably, the percolation transition occurs at a much lower density than the crossover.
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页数:4
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