Preparation and characterization of amorphous SiOx nanowires

被引：110

作者：

Liang, CH ^{[1
]}

Zhang, LD ^{[1
]}

Meng, GW ^{[1
]}

Wang, YW ^{[1
]}

Chu, ZQ ^{[1
]}

机构：

[1] Acad Sinica, Inst Solid State Phys, Internal Frict & Defects Solids Lab, Dept Nanostructured Mat, Hefei 230031, Peoples R China

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 277卷 / 01期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/S0022-3093(00)00296-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Large-scale synthesis of amorphous silicon oxide nanowires (SiONWs) was achieved by using simple physical evaporation of the mixture of silica xerogel containing Fe nanoparticles and silicon powder. Transmission electron microscopy (TEM) observations showed that the amorphous SiONWs have a length of up to several tens of micrometers and a diameter of 10-40 nm. Energy-dispersed X-ray spectrometry (EDX) analysis revealed that the SiONWs consist of Si and O elements in atomic ratio approximately to 1:1.4. Different morphologies of nanowires such as straight, smoothly curved, braided and helical shapes were observed. The formation process of SiONWs was closely related to the VLS growth mechanism. Raman scattering spectrum of amorphous SiONWs showed that there is an asymmetric, broadened linewidth Raman peak at 502 cm(-1) greatly different from that of bulk SiO2 non-crystalline solids. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：63 / 67

页数：5

共 18 条

[11] Cathode ray tube lighting elements with carbon nanotube field emitters [J].

Saito, Y ;

Uemura, S ;

Hamaguchi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (3B) :L346-L348

[12]

TADAHIRO M, 1992, J MATER SCI, V27, P1675

[13] Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low-pressure chemical vapor deposition [J].

Voutsas, AT ;

Hatalis, MK ;

Boyce, J ;

Chiang, A .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (12) :6999-7006

[14] VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E ) [J].

WAGNER, RS ;

ELLIS, WC .

APPLIED PHYSICS LETTERS, 1964, 4 (05) :89-&

[15] Si nanowires grown from silicon oxide [J].

Wang, N ;

Tang, YH ;

Zhang, YF ;

Lee, CS ;

Bello, I ;

Lee, ST .

CHEMICAL PHYSICS LETTERS, 1999, 299 (02) :237-242

[16] Direct evidence of quantum confinement from the size dependence of the photoluminescence of silicon quantum wires [J].

Yu, DP ;

Bai, ZG ;

Wang, JJ ;

Zou, YH ;

Qian, W ;

Fu, JS ;

Zhang, HZ ;

Ding, Y ;

Xiong, GC ;

You, LP ;

Xu, J ;

Feng, SQ .

PHYSICAL REVIEW B, 1999, 59 (04) :R2498-R2501

[17] Synthesis of nano-scale silicon wires by excimer laser ablation at high temperature [J].

Yu, DP ;

Lee, CS ;

Bello, I ;

Sun, XS ;

Tang, YH ;

Zhou, GW ;

Bai, ZG ;

Zhang, Z ;

Feng, SQ .

SOLID STATE COMMUNICATIONS, 1998, 105 (06) :403-407

[18] Amorphous silica nanowires: Intensive blue light emitters [J].

Yu, DP ;

Hang, QL ;

Ding, Y ;

Zhang, HZ ;

Bai, ZG ;

Wang, JJ ;

Zou, YH ;

Qian, W ;

Xiong, GC ;

Feng, SQ .

APPLIED PHYSICS LETTERS, 1998, 73 (21) :3076-3078

← 1 2 →