Deep submicrometer double-gate fully-depleted SOI PMOS devices: A concise short-channel effect threshold voltage model using a quasi-2D approach

This paper reports a concise short-channel effect threshold voltage model using a quasi-2D approach for deep submicrometer double-gate fully-depleted SOI PMOS devices, By considering the hole density at the front and the back channels simultaneously, the analytical threshold voltage model provides an accurate prediction of the short-channel threshold voltage behavior of the deep submicrometer double-gate fully-depleted SOI PMOS devices as verified by the 2D simulation results. The analytical short-channel effect threshold voltage model can also be useful for SOI NMOS devices.