Electronic structure calculations on nitride semiconductors

被引：163

作者：

Pugh, SK ^{[1
]}

Dugdale, DJ ^{[1
]}

Brand, S ^{[1
]}

Abram, RA ^{[1
]}

机构：

[1] Univ Durham, Dept Phys, Durham DH1 3LE, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1999年 / 14卷 / 01期

关键词：

D O I：

10.1088/0268-1242/14/1/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A series of calculations have been performed on group-III nitrides (GaN, AlN and InN) in both zinc-blende and wurtzite structures. Three different levels of computation have been performed in an integrated programme of study: first-principles total energy calculations, semi-empirical pseudopotential calculations and k . p calculations. Bandstructures are obtained from each method in a consistent manner, and used to provide effective masses and k . p parameters for planned work on the electronic structure of alloys and quantum well heterostructures.

引用

页码：23 / 31

页数：9

共 37 条

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