Ultra high-Q photonic crystal nanocavity design:: The effect of a low-ε slab material

被引：28

作者：

Bayn, Igal ^{[1
]}

Salzman, Joseph

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Ctr Electron Microscopy, IL-32000 Haifa, Israel

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 07期

关键词：

D O I：

10.1364/OE.16.004972

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We analyze the influence of the dielectric constant of the slab on the quality factor (Q) in slab photonic crystal cavities with a minimized vertical losses model. The higher value of Q in high-e cavity is attributed to the lower mode frequency. The Q ratio in a high-e (silicon) vs. low-e (diamond) slab is examined as a function of mode volume (V(m)). The mode volume compensation technique is discussed. Finally, diamond cavity design is addressed. The analytical results are compared to 3D FDTD calculations. In a double heterostructure design, a Q approximate to 2.6 x 10(5) is obtained. The highest Q approximate to 1.3 x 10(6) with V(m)= 1.77 x(lambda/n)(3) in a local width modulation design is derived. (C) 2008 Optical Society of America.

引用

页码：4972 / 4980

页数：9

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