Laser-diode-array end-pumped 8.2-W CW Nd: GdVO4 laser at 1.34 μm

被引：8

作者：

Du, CL ^{[1
]}

Zhang, HJ

Ruan, SC

Xu, GB

Hu, DW

Wang, ZP

Xu, XG

Wang, JY

Xu, XG

Shao, ZS

Jiang, MH

机构：

[1] Shenzhen Univ, Sch Engn & Technol, Shenzhen 518060, Peoples R China

[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 02期

基金：

中国国家自然科学基金;

关键词：

1.34 mu m; diode-end-pumped; gadolinium vanadate; Nd : GdVO4; solid-state lasers;

D O I：

10.1109/LPT.2003.823137

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A laser-diode-array end-pumped 0.3-at.% Nd-doped GdVO4 high-power continuous-wave (CW) laser operating at 1.34 mum has been demonstrated. The maximum CW output power of 8.23 W was obtained at the incident pump power of 27.9 W, giving the corresponding optical conversion efficiency of 29.5% and the average slope efficiency of 30.2%. Two Nd : GdVO4 crystals with Nd3+ concentration of 0.5 and 1.14 at.% were also investigated for the comparison to show the advantage of lowly Nd-doped crystals applied to high-power lasers.

引用

页码：386 / 388

页数：3

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