Photoinduced structures in the exciton luminescence spectrum of InGaAs/GaAs quantum well heterostructures

被引：13

作者：

Borri, P

Gurioli, M

Colocci, M

Martelli, F

Capizzi, M

Patane, A

Polimeni, A

机构：

[1] LAB EUROPEO SPETTROSCOPIE NONLINEARI,I-50125 FLORENCE,ITALY

[2] FDN UGO BORDONI,I-00142 ROME,ITALY

[3] UNIV ROMA LA SAPIENZA,IST NAZL FIS MAT,DIPARTIMENTO FIS,I-00185 ROME,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 05期

关键词：

D O I：

10.1063/1.363160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A large set of InGaAs/GaAs quantum well structures was investigated by means of continuous wave photoluminescence (PL) and photoluminescence excitation spectroscopy. Strong photomodulation effects are observed in PL, namely, a strong sensitivity to the excitation energy and strong changes in the line shape when resonant and nonresonant excitations are used together. Correspondingly, the exciton emission exhibits a doublet structure and the excitation spectra, as detected by monitoring the emission at the two peak energies of the PL doublet, show quite different profiles, with peaks and/or dips not directly related to absorption resonances. On the grounds of time-resolved experiments it is shown that band-bending modifications, due to trapping of free carriers at interface defects, account for the observed photomodulation. (C) 1996 American Institute of Physics.

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页码：3011 / 3016

页数：6

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