SATURATION OF PHOTOLUMINESCENCE QUENCHING UNDER BELOW-GAP EXCITATION IN A GAAS/ALGAAS QUANTUM-WELL

被引：33

作者：

KANOH, E ^{[1
]}

HOSHINO, K ^{[1
]}

KAMATA, N ^{[1
]}

YAMADA, K ^{[1
]}

NISHIOKA, M ^{[1
]}

ARAKAWA, Y ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

JOURNAL OF LUMINESCENCE | 1995年 / 63卷 / 5-6期

关键词：

D O I：

10.1016/0022-2313(94)00084-P

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have studied the photoluminescence (PL) of a lightly Se-doped GaAs/AlGaAs quantum well under both above-gap and below-gap excitation (AGE and BGE, respectively) and observed a saturation of the PL quenching with increasing the BGE power for the first time. The PL quenching saturation was attributed to the trap-filling effect of electrons in one of below-gap states. An additional condition of the trap-filling regime in the rate-equation analysis enabled us to determine recombination parameters of two interacting below-gap states quantitatively. A numerically obtained result explained the measured dependence of the PL quenching on the BGE power fairly well.

引用

页码：235 / 240

页数：6

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