BAND AND DEEP EMISSION AND THEIR RECOMBINATION PROCESSES IN A HEAVILY SI DOPED GAAS/ALGAAS QUANTUM WELL

被引:5
作者
KATAHAMA, H [1 ]
TSUCHIYA, H [1 ]
SHAKUDA, Y [1 ]
KAMATA, N [1 ]
KOBAYASHI, K [1 ]
SUZUKI, T [1 ]
机构
[1] NHK SCI & TECH RES LABS, SETAGAYA KU, TOKYO 157, JAPAN
关键词
D O I
10.1016/0749-6036(89)90377-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:523 / 526
页数:4
相关论文
共 9 条
[1]   RECOMBINATION DYNAMICS IN GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES [J].
FOUQUET, JE ;
BURNHAM, RD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1799-1810
[2]  
FUJIMOTO I, 1987, I PHYS C SER, V91, P247
[3]   SHORT PULSE PHYSICS OF QUANTUM WELL STRUCTURES [J].
GOBEL, EO ;
KUHL, J ;
HOGER, R .
JOURNAL OF LUMINESCENCE, 1985, 30 (1-4) :541-550
[4]   DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J].
GREINER, ME ;
GIBBONS, JF .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :750-752
[5]   DESIGN PARAMETERS OF FREQUENCY-RESPONSE OF GAAS-(GA,AL)AS DOUBLE HETEROSTRUCTURE LEDS FOR OPTICAL COMMUNICATIONS [J].
IKEDA, K ;
HORIUCHI, S ;
TANAKA, T ;
SUSAKI, W .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (07) :1001-1005
[6]   EFFECT OF SELECTIVE DOPING ON THE EMISSION CHARACTERISTICS OF A HEAVILY SI-DOPED GAAS/ALGAAS QUANTUM-WELL [J].
KAMATA, N ;
TSUCHIYA, H ;
KOBAYASHI, K ;
SUZUKI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07) :L1082-L1084
[7]   DONOR-CATION VACANCY COMPLEX IN SI-DOPED ALGAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
TATSUYA, O ;
ITOH, H ;
TANAKA, H ;
KASAI, K ;
TAKIKAWA, M ;
KOMENO, J .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) :4603-4605
[8]   ELECTRON LOCALIZATION BY A METASTABLE DONOR LEVEL IN N-GAAS - A NEW MECHANISM LIMITING THE FREE-CARRIER DENSITY [J].
THEIS, TN ;
MOONEY, PM ;
WRIGHT, SL .
PHYSICAL REVIEW LETTERS, 1988, 60 (04) :361-364
[9]  
Williams E. W., 1992, SEMICONDUCT SEMIMET, V8, P321