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DONOR-CATION VACANCY COMPLEX IN SI-DOPED ALGAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
被引:18
作者
:
TATSUYA, O
论文数:
0
引用数:
0
h-index:
0
TATSUYA, O
ITOH, H
论文数:
0
引用数:
0
h-index:
0
ITOH, H
TANAKA, H
论文数:
0
引用数:
0
h-index:
0
TANAKA, H
KASAI, K
论文数:
0
引用数:
0
h-index:
0
KASAI, K
TAKIKAWA, M
论文数:
0
引用数:
0
h-index:
0
TAKIKAWA, M
KOMENO, J
论文数:
0
引用数:
0
h-index:
0
KOMENO, J
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1987年
/ 61卷
/ 09期
关键词
:
D O I
:
10.1063/1.338369
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:4603 / 4605
页数:3
相关论文
共 7 条
[1]
SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .1. TELLURIUM DOPING
[J].
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
RSRE, Malvern, Worcs England
HURLE, DTJ
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1979,
40
(08)
:627
-637
[2]
REVISED CALCULATION OF POINT-DEFECT EQUILIBRIA AND NONSTOICHIOMETRY IN GALLIUM-ARSENIDE
[J].
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
RSRF, Malvern, Worcs England
HURLE, DTJ
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1979,
40
(08)
:613
-626
[3]
SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .2. TIN-DOPING
[J].
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
HURLE, DTJ
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1979,
40
(08)
:639
-646
[4]
SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GALLIUM-ARSENIDE .3. GERMANIUM-DOPING
[J].
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
RSRE, Malvern, Worcs. England
HURLE, DTJ
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1979,
40
(08)
:647
-652
[5]
NEW EMISSION BAND IN SELF-ACTIVATED ZNS
[J].
ODA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Tokyo Institute of Technology, Midori-ku, Yokohama, 227, Nagatsuda
ODA, S
;
KUKIMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
Tokyo Institute of Technology, Midori-ku, Yokohama, 227, Nagatsuda
KUKIMOTO, H
.
JOURNAL OF LUMINESCENCE,
1979,
18-9
(JAN)
:829
-832
[6]
ELECTRICAL AND OPTICAL-PROPERTIES OF DEEP LEVELS IN MOVPE GROWN GAAS
[J].
SAMUELSON, L
论文数:
0
引用数:
0
h-index:
0
SAMUELSON, L
;
OMLING, P
论文数:
0
引用数:
0
h-index:
0
OMLING, P
;
TITZE, H
论文数:
0
引用数:
0
h-index:
0
TITZE, H
;
GRIMMEISS, HG
论文数:
0
引用数:
0
h-index:
0
GRIMMEISS, HG
.
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
:164
-172
[7]
WILLIAMS EW, 1972, SEMICONDUCT SEMIMET, V8, pCH5
←
1
→
共 7 条
[1]
SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .1. TELLURIUM DOPING
[J].
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
RSRE, Malvern, Worcs England
HURLE, DTJ
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1979,
40
(08)
:627
-637
[2]
REVISED CALCULATION OF POINT-DEFECT EQUILIBRIA AND NONSTOICHIOMETRY IN GALLIUM-ARSENIDE
[J].
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
RSRF, Malvern, Worcs England
HURLE, DTJ
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1979,
40
(08)
:613
-626
[3]
SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .2. TIN-DOPING
[J].
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
HURLE, DTJ
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1979,
40
(08)
:639
-646
[4]
SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GALLIUM-ARSENIDE .3. GERMANIUM-DOPING
[J].
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
RSRE, Malvern, Worcs. England
HURLE, DTJ
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1979,
40
(08)
:647
-652
[5]
NEW EMISSION BAND IN SELF-ACTIVATED ZNS
[J].
ODA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Tokyo Institute of Technology, Midori-ku, Yokohama, 227, Nagatsuda
ODA, S
;
KUKIMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
Tokyo Institute of Technology, Midori-ku, Yokohama, 227, Nagatsuda
KUKIMOTO, H
.
JOURNAL OF LUMINESCENCE,
1979,
18-9
(JAN)
:829
-832
[6]
ELECTRICAL AND OPTICAL-PROPERTIES OF DEEP LEVELS IN MOVPE GROWN GAAS
[J].
SAMUELSON, L
论文数:
0
引用数:
0
h-index:
0
SAMUELSON, L
;
OMLING, P
论文数:
0
引用数:
0
h-index:
0
OMLING, P
;
TITZE, H
论文数:
0
引用数:
0
h-index:
0
TITZE, H
;
GRIMMEISS, HG
论文数:
0
引用数:
0
h-index:
0
GRIMMEISS, HG
.
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
:164
-172
[7]
WILLIAMS EW, 1972, SEMICONDUCT SEMIMET, V8, pCH5
←
1
→