ELECTRON LOCALIZATION BY A METASTABLE DONOR LEVEL IN N-GAAS - A NEW MECHANISM LIMITING THE FREE-CARRIER DENSITY

被引：149

作者：

THEIS, TN

MOONEY, PM

WRIGHT, SL

机构：

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 60卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.60.361

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：361 / 364

页数：4

共 21 条

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[2] EFFECT OF THE SILICON DOPING CONCENTRATION ON THE RECOMBINATION KINETICS OF DX CENTERS IN AL0.35GA0.65AS [J].

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[3] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

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[5] ELECTRON INTERFERENCE EFFECTS IN QUANTUM-WELLS - OBSERVATION OF BOUND AND RESONANT STATES [J].

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[6] NEW MODEL OF DEEP DONOR CENTRES IN AlxGa1 - xAs. [J].

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[7] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT [J].

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DRUMMOND, TJ .

APPLIED PHYSICS LETTERS, 1986, 48 (10) :656-658

[8] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

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[9]

LI A, 1985, J VAC SCI TECHNOL B, V3, P629, DOI 10.1116/1.583155

[10] INVESTIGATION OF THE DX CENTER IN HEAVILY DOPED N-TYPE GAAS [J].

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PHYSICAL REVIEW LETTERS, 1987, 59 (07) :815-818

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