Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-μm laser for metropolitan applications

被引：17

作者：

Dagens, B ^{[1
]}

Martinez, A

Make, D

Le Gouezigou, W

Provost, JG

Sallet, V

Merghem, K

Harmand, JC

Ramdane, A

Thedrez, B

机构：

[1] Alcatel Thales 3 5 Lab, F-91460 Marcoussis, France

[2] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 05期

关键词：

characteristic temperature T-o; GaInNAs; metropolitan area networks; optical communication; semiconductor lasers;

D O I：

10.1109/LPT.2005.845718

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Among the new semiconductor materials for telecorn devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high To. Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25 degrees C-85 degrees C. Besides transmission is demonstrated up to 10 Gb/s at 25 degrees C on the same fiber, without penalty and bit-error-rate floor.

引用

页码：971 / 973

页数：3

共 9 条

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AOKI M, 2002, IEEE 18 INT SEM LAS, P63

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