Emission characteristics of CuGaS2-based light-emitting diode grown by metalorganic vapor phase epitaxy

被引：15

作者：

Honda, T

Hara, K

Yoshino, J

Kukimoto, H

机构：

[1] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

[3] Toppan Printing Co Ltd, Multimedia Div, Taito Ku, Tokyo 1108560, Japan

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2003年 / 64卷 / 9-10期

关键词：

D O I：

10.1016/S0022-3697(03)00254-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Phosphorus-doped CuGaS2 layers were grown on (001) GaP substrates by metalorganic vapor phase epitaxy. The p-type conductivity was controllable under the phosphine flow rate conditions. The rectification characteristics of a p-CuGaS2/n-GaP heterostructure indicated that the p-n junction was formatted. Orange light electroluminescence was observed from the CuGaS2-based diode at room temperature. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：2001 / 2003

页数：3

共 12 条

[1] Visible and ultraviolet photoluminescence from Cu-III-VI2 chalcopyrite semiconductors grown by metalorganic vapor phase epitaxy [J].

Chichibu, S ;

Shirakata, S ;

Isomura, S ;

Nakanishi, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B) :1703-1714

[2] EPITAXIAL-GROWTH OF CUGAS2 BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HARA, K ;

KOJIMA, T ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07) :L1107-L1109

[3] METALORGANIC VAPOR-PHASE EPITAXY OF CUGAS2 USING DITERTIARYBUTYLSULFIDE AS THE SULFUR SOURCE [J].

HONDA, T ;

OTOMA, H ;

HARA, K ;

YOSHINO, J ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (4B) :L560-L562

[4]

HONDA T, 1997, I PHYS C SER, V152, P373

[5] GREEN ELECTROLUMINESCENCE FROM ZNS-CUGAS2 HETEROJUNCTION DIODE IN DC OPERATION [J].

KOBAYASHI, S ;

MOMIYAMA, Y ;

KANEKO, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1747-L1749

[6] DC GREEN ELECTROLUMINESCENCE OF AL-CUGAS2 DIODE [J].

KOBAYASHI, S ;

MOMIYAMA, Y ;

KANEKO, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (11B) :L1606-L1608

[7]

Shay J., 1975, Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications

[8] Experimental determination of valence band discontinuities at Cu(Al,Ga)(S,Se)2/GaAs(001) heterointerfaces using ultraviolet photoemission spectroscopy [J].

Sugiyama, M ;

Nakanishi, H ;

Chichibu, SF .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (5A) :L428-L430

[9] ROOM-TEMPERATURE ELECTRICAL PROPERTIES OF 10 I-III-VI2 SEMICONDUCTORS [J].

TELL, B ;

SHAY, JL ;

KASPER, HM .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2469-&

[10]

TELL B, 1972, J APPL PHYS, V43, P4988

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