Experimental determination of valence band discontinuities at Cu(Al,Ga)(S,Se)2/GaAs(001) heterointerfaces using ultraviolet photoemission spectroscopy

被引：24

作者：

Sugiyama, M

Nakanishi, H

Chichibu, SF

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Tokyo Univ Sci, Dept Elect Engn, Chiba 2788510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 5A期

关键词：

chalcopyrite; Cu(Al; Ga)(S; Se)(2); band discontinuity; heterointerface; UPS;

D O I：

10.1143/JJAP.40.L428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultraviolet photoemission spectroscopy measurement was carried out for o(001) plane Cu(Al,Ga)(S,Se)(2) chalcopyrite structure epi layers grown on GaAs(001) substrates to determine valence band discontinuities, DeltaE(v), at the heterointerfaces. The values of DeltaE(v) were estimated to be about 1.2 eV for CuAlS2/GaAs. 1.0 eV for CuAlSe2/GaAs, 1.1 eV for CuGaS2/GaAs and 0.3 eV for CuGaSe2/GaAs. From these values and bandgap energies of the corresponding compounds, Cu(AI,Ga)(S,Se)2 System is considered to offer the TYPE-I heterostructures between the corresponding narrow bandgap materials and wide bandgap ones.

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页码：L428 / L430

页数：3

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