Improved quality of CuGaSe2 and CuAlSe2 epilayers grown on CuGa0.96In0.04Se2 substrates

被引：15

作者：

Chichibu, S

Nakanishi, H

Shirakata, S

Isomura, S

Miyake, H

Sugiyama, K

机构：

[1] EHIME UNIV,FAC ENGN,MATSUYAMA,EHIME 790,JAPAN

[2] MIE UNIV,FAC ENGN,TSU,MIE 514,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 04期

关键词：

D O I：

10.1063/1.119600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nearly strain foe CuGaSe2 and CuAlSe2 thin films were successfully grown by metalorganic vapor phase epitaxy on CuGa0.96In0.04Se2 substrates prepared by the traveling heater method (THM). CuAlSe2 (112) epilayers exhibited fine surface structures which reflected the crystal geometry. The CuGaSe2 epilayers exhibited intense near-band-edge emission even at room temperature. THM-grown single crystals were demonstrated to be a suitable substrates for epitaxy of chalcopyrite compounds. (C) 1997 American Institute of Physics.

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页码：533 / 535

页数：3

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