Photoreflectance of Cu-based I-III-VI2 heteroepitaxial layers grown by metalorganic chemical vapor deposition

被引：53

作者：

Shirakata, S ^{[1
]}

Chichibu, S ^{[1
]}

机构：

[1] SCI UNIV TOKYO, FAC SCI & TECHNOL, NODA, CHIBA 278, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 04期

关键词：

D O I：

10.1063/1.361059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoreflectance (PR) spectroscopy has been developed as a powerful technique for the characterization of the heteroepitaxial layer of the Cu-III-VI2, semiconductors having the chalcopyrite structure. PR measurements have been carried out in the energy region near the fundamental absorption edge at 77 K for the heteroepitaxial layers of CuAlSe2, CuGaSe2, CuGaS2 and CuAlS2 grown on GaAs and GaP substrates by means of the low-pressure metalorganic chemical vapor deposition. Crystal quality, stress, and the crystallographic orientation have been well characterized, based on the analysis of the PR spectra in terms of transition energy, intensity, and broadening parameter. (C) 1996 American Institute of Physics.

引用

页码：2043 / 2054

页数：12

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