Hydrogen microstructure in hydrogenated amorphous silicon

被引：49

作者：

Ouwens, JD

Schropp, REI

机构：

[1] Debye Institute, Utrecht University, 3508 TA Utrecht

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.54.17759

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a method to determine the local hydrogen bonding structure in hydrogenated amorphous silicon from infrared spectroscopy measurements. This approach is based on a different oscillator strength and refractive index for hydrogen atoms located in the isolated and clustered phase. It is demonstrated that the density of distributed hydrogen atoms does not exceed 3-4 at.%, independent of the deposition conditions for several deposition techniques. We suggest that changes in the infrared-absorption strength upon ion bombardment or light soaking can be attributed to a hydrogen exchange between clustered and isolated phases.

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页码：17759 / 17762

页数：4

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