ZnO nanowire network transistor fabrication on a polymer substrate by low-temperature, all-inorganic nanoparticle solution process

被引：94

作者：

Ko, Seung H. ^{[1
]}

Park, Inkyu ^{[1
]}

Pan, Heng ^{[1
]}

Misra, Nipun ^{[1
]}

Rogers, Matthew S. ^{[1
]}

Grigoropoulos, Costas P. ^{[1
]}

Pisano, Albert P. ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2908962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

All-solution processed, low-temperature zinc oxide nanowire network transistor fabrication on a polymer substrate was demonstrated. This simple process can produce high resolution metal electrode transistors with inorganic semiconductor nanowire active material in a fully maskless sequence, eliminating the need for lithographic and vacuum processes. The temperature throughout the processing was under 140 degrees C, which will enable further applications to electronics on low-cost, large-area flexible polymer substrates. (C) 2008 American Institute of Physics.

引用

页数：3

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