Excitonic exchange splitting in bulk semiconductors

被引：91

作者：

Fu, HX ^{[1
]}

Wang, LW ^{[1
]}

Zunger, A ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.59.5568

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an approach to calculate the excitonic fine-structure splittings due to electron-hole short-range exchange interactions using the local-density approximation pseudopotential method, and apply it to bulk semiconductors CdSe, InP, GaAs, and InAs. Comparing with previous theoretical results, the current calculated splittings agree well with experiments. Furthermore, we provide an approximate relationship between the short-range exchange splitting and the exciton Bohr radius, which can be used to estimate the exchange splitting for other materials. The current calculation indicates Chat a commonly used formula for exchange splitting in quantum dot is not valid. Finally, we find a very large pressure dependence of the exchange splitting: a factor of 4.5 increase as the lattice constant changes by 3.5%. This increase is mainly due to the decrease of the Bohr radius via the char;ge of electron effective mass. [S0163-1829(99)02407-8].

引用

页码：5568 / 5574

页数：7

共 55 条

[1] ELECTRON-HOLE EXCHANGE ENERGY IN SHALLOW EXCITONS [J].