Praseodymium-substituted strontium bismuth tantalate films with saturated remanent polarization at 1 V

被引：7

作者：

Aizawa, K

Ishiwara, H

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 7B期

关键词：

SrBi2Ta2O9; praseodymium; ferroelectric properties; ferroelectric memory; site engineering;

D O I：

10.1143/JJAP.42.L840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sr-deficient and praseodymium-substituted SrBi2Ta2O9 (SPrBT) films with a saturated remanent polarization of as low as I V were prepared on Pt/Ti/SiO2/Si structures using the sol-gel method. The maximum remanent polarization (P,) value of the SPrBT films was obtained using a Sr0.8Pr0.13Bi2Ta2O9 precursor solution. The P-r and coercive field saturation values of a 123-nm-thick SPrBT film annealed at 850degreesC were 7.8 muC/cm(2) and 37 kV/cm, respectively, and a high P-r value of 6.7 muC/cm(2) was obtained at an applied voltage of I V. The SPrBT films showed only a 2% fatigue after a polarization switching of 5 x 10(9) cycles, which is similar to that of Sr-deficient and Bi-excess SrBi2Ta2O9 films.

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页码：L840 / L842

页数：3

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