Electron-determined nonuniform carrier distribution among InGaAsP multiple quantum wells

被引：4

作者：

Lin, CF ^{[1
]}

Wu, BR

Laih, LW

机构：

[1] Natl Taiwan Univ, Grad Inst ElectroOpt Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[3] Chunghua Telecom Co Ltd, Telecommun Lab, Taoyuan, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 9A期

关键词：

laser diodes; superluminescent diodes; multiple quantum wells; nonuniform carrier distribution; separate-confinement heterostructure layer;

D O I：

10.1143/JJAP.42.5557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experiments on laser diodes and superluminescent diodes with nonidentical InGaAsP multiple quantum wells (MQWs) show that quantum wells near the n-cladding layer could accumulate more carriers than those near the p-cladding layer, indicating that nonuniform carrier distribution is determined by electrons instead of holes. The electron-determined behavior is attributed to the thick separate-confinement heterostructure layer. This contrary observation to hole-determined nonuniform carrier distribution implies that carrier distribution among the MQWs could be engineered for desired purposes.

引用

页码：5557 / 5558

页数：2

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