Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper

被引:48
作者
Chang, SC
Shieh, JM [1 ]
Lin, KC
Dai, BT
Wang, TC
Chen, CF
Feng, MS
Li, YH
Lu, CP
机构
[1] Natl Chiao Tung Univ, Inst Mat Sci & Engn, Hsinchu 30050, Taiwan
[2] Merck Kanto Adv Chem Ltd, Taipei, Taiwan
[3] Natl Nano Device Labs, Hsinchu 30050, Taiwan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 03期
关键词
D O I
10.1116/1.1368673
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Through elucidating the effects of current density, cupric ion concentration, bath temperature, and air agitation on plating uniformity and filling capability of copper electroplating, the deposition of copper in an acid copper electrolyte will be illustrated to scale down to the sub-0.13 mum features with uniform plating, which is required by chemical mechanical polishing in current damascene techniques. In order to achieve the defect-free filling in sub-0.13 mum vias and trenches, the electrolyte must be composed of proper amounts of cupric ions, sulfuric acid, chloride ions, wetting agent, and filling promoter. The supplied current controlled at a lower current density, agitation acceded to the electroplating process were found as further keys. In the electrolyte, the filling promoter was consisted essentially of thiazole derivatives with benzyl groups and amino-group (-NH2) offering sufficient inhibition on copper depositing and selective inhibition gradient. Moreover, a lower resistivity film and higher filling capability could be obtained by using periodic pulse current plating as compared with direct current plating. (C) 2001 American Vacuum Society.
引用
收藏
页码:767 / 773
页数:7
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