Growth of epitaxial ZnO thin film by oxidation of epitaxial ZnS film on Si(111) substrate

被引：22

作者：

Miyake, A

Kominami, H

Tatsuoka, H

Kuwabara, H

Nakanishi, Y

Hatanaka, Y

机构：

[1] Shizuoka Univ, Grad Sch Elect Sci & Technol, Hamamatsu, Shizuoka 4328011, Japan

[2] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan

[3] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 11B期

关键词：

ZnO; epitaxial growth; exciton; thin film; UV emission; Si substrate; photoluminescence;

D O I：

10.1143/JJAP.39.L1186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of an epitaxial ZnO thin film on a Si substrate by oxidation of an epitaxial ZnS him is a novel method and we are reporting it for the first time. The merits of using the Si substrate are to make the driving voltage of light-emitting diodes (LEDs) lower and the cost of the LEDs less expensive than that using a sapphire substrate. In this study, the epitaxial ZnO thin film could be successfully grown on the Si substrate. The epitaxial films showed a strong near-ultraviolet emission with a peak at around 3.32 eV at room temperature under 325 nm excitation.

引用

页码：L1186 / L1187

页数：2

共 3 条

[1] Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE [J].